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2SA1051 |
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| Part Number | 2SA1051 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... |
| Features |
Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -7.5A; IB= -0.75A
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -1A ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -1A ; VCE= -10V
hFE Classifications R O Y 55-110 80-160 120-240 2SA1051 MIN TYP. MAX UNIT -150 V -150 V -5 V -2.0 V -10 μA -10 μA 55 240 60 MHz Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information ... |
| Document |
 2SA1051 Data Sheet
PDF 198.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1050 |
SavantIC |
Silicon POwer Transistors |
|
| 2 | 2SA1050 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1052 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 4 | 2SA100 |
ETC |
Ge PNP Drift Transistor |
|
| 5 | 2SA1001 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|