A, B 2N711 I (GERMANIUM) CASE 22 (TO-lS) Collector conneded to case PNP germanium mesa transistors for high-speed switching applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Emitter Current (Continuous) Junction Temperature Storage Temperatur.
e = 100 I'Adc)
(Ie = 20 ",Adc)
2N711 2N711A
2N711B
BVCES
Collector-Emitter Breakdown Voltage
(Ie = 5 mAde, IB = 0)
BVCEO 2N711A, 2N711E
Emitter-Base Breakdown Voltage
(IE = 0.1 mAde, Ie = 0)
2N711 2N711A 2N711B
BVEBO
Collector-Base Cutoff Current
(VCB = 5 Vdc, IE = 0)
(VCB = 10 Vdc, IE = 0)
2N711 2N711A
2N711B
IeBO
Emitter-Base Cutoff Current (VEB = 1 Vdc)
2N711A 2N711B
lEBO
DC Current Gain
(IC : 10 mAde, VCE = 0.5 Vdc)
(Ie = 50 mAde, VCE
• 0.7 Vdc)
hFE 2N711 2N711A 2N711B
2N711A, 2N711B
Collector saturation Voltage
(Ie = 10 mAde, IB = 0.5 mAde)
(Ie = 10 mAde, IB = 0.4 mAde) (I.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7104 |
Siliconix |
N-Channel Lateral DMOS FETs | |
2 | 2N7105 |
Siliconix |
N-Channel Lateral DMOS FETs | |
3 | 2N7106 |
Siliconix |
N-Channel Lateral DMOS FETs | |
4 | 2N7107 |
Siliconix |
N-Channel Lateral DMOS FETs | |
5 | 2N7108 |
Siliconix |
N-Channel Lateral DMOS FETs | |
6 | 2N7109 |
Siliconix |
N-Channel Lateral DMOS FETs | |
7 | 2N7116 |
Siliconix |
N-Channel Lateral DMOS Quad FETs | |
8 | 2N7117 |
Siliconix |
N-Channel Lateral DMOS Quad FETs | |
9 | 2N7118 |
Siliconix |
N-Channel Lateral DMOS Quad FETs | |
10 | 2N711A |
Motorola |
PNP Transistor | |
11 | 2N711B |
Motorola |
PNP Transistor | |
12 | 2N7142 |
SSDI |
NPN Transistor |