2N7105 - Siliconix

2N7105 N-Channel Lateral DMOS FETs

2N7105 SERIES N-Channel Lateral DMOS FETs The 2N7105 Series of single-pole, single-throw analog switches is designed for high speed switching in audio, video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. This series also f.

Features

METERS/TEST CONDITIONS SYMBOL 2N7105 LIMIT 2N7107 2N7109 Gate-Source, Gate-Drain Voltage VGS,VGD -30/25 -15/25 -25/30 Gate-Substrate Voltage 1 VGB -0.3/25 -0.3/25 -0.3/30 Drain-Source Voltage VDS 30 10 20 Source-Drain Voltage Drain-Substrate Voltage VSD 10 10 20 VOB 30 15 25 Source-Substrate Voltage VSB 15 15 25 Drain Current Power Dissipation (TJ = 25°C) 10 50 50 50 Po 300 300 300 Power Derating 2.4 2.4 2.4 Operating Junction Temperature TJ -55 to 150 Storage Temperature T stg Lead Temperature (1/16" from case for 10 seconds) h lThese devi.