2N7105 SERIES N-Channel Lateral DMOS FETs The 2N7105 Series of single-pole, single-throw analog switches is designed for high speed switching in audio, video, and high-frequency applications. These devices are designed on the Siliconix DMOS process and utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. This series also f.
METERS/TEST CONDITIONS SYMBOL 2N7105 LIMIT 2N7107 2N7109 Gate-Source, Gate-Drain Voltage VGS,VGD -30/25 -15/25 -25/30 Gate-Substrate Voltage 1 VGB -0.3/25 -0.3/25 -0.3/30 Drain-Source Voltage VDS 30 10 20 Source-Drain Voltage Drain-Substrate Voltage VSD 10 10 20 VOB 30 15 25 Source-Substrate Voltage VSB 15 15 25 Drain Current Power Dissipation (TJ = 25°C) 10 50 50 50 Po 300 300 300 Power Derating 2.4 2.4 2.4 Operating Junction Temperature TJ -55 to 150 Storage Temperature T stg Lead Temperature (1/16" from case for 10 seconds) h lThese devi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7104 |
Siliconix |
N-Channel Lateral DMOS FETs | |
2 | 2N7105 |
Siliconix |
N-Channel Lateral DMOS FETs | |
3 | 2N7106 |
Siliconix |
N-Channel Lateral DMOS FETs | |
4 | 2N7108 |
Siliconix |
N-Channel Lateral DMOS FETs | |
5 | 2N7109 |
Siliconix |
N-Channel Lateral DMOS FETs | |
6 | 2N711 |
Motorola |
PNP Transistor | |
7 | 2N7116 |
Siliconix |
N-Channel Lateral DMOS Quad FETs | |
8 | 2N7117 |
Siliconix |
N-Channel Lateral DMOS Quad FETs | |
9 | 2N7118 |
Siliconix |
N-Channel Lateral DMOS Quad FETs | |
10 | 2N711A |
Motorola |
PNP Transistor | |
11 | 2N711B |
Motorola |
PNP Transistor | |
12 | 2N7142 |
SSDI |
NPN Transistor |