N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed .
Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 500 mA [1] Min - Typ 1 Max 60 ±20 290 1.6 Unit V V mA Ω [1] Device mounted on an FR4 PCB, single-side.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7002BK |
NXP Semiconductors |
N-channel MOSFET | |
2 | 2N7002BK |
nexperia |
N-channel MOSFET | |
3 | 2N7002BKMB |
NXP Semiconductors |
single N-channel MOSFET | |
4 | 2N7002BKS |
NXP Semiconductors |
dual N-channel MOSFET | |
5 | 2N7002BKS |
nexperia |
dual N-channel MOSFET | |
6 | 2N7002BKV |
nexperia |
dual N-channel MOSFET | |
7 | 2N7002BKW |
NXP Semiconductors |
N-channel MOSFET | |
8 | 2N7002BKW |
nexperia |
N-channel MOSFET | |
9 | 2N7002B |
KODENSHI KOREA |
N-channel MOSFET | |
10 | 2N7002 |
Fairchild Semiconductor |
N-channel FET | |
11 | 2N7002 |
GME |
N-Channel Power Mosfet | |
12 | 2N7002 |
nexperia |
300mA N-channel MOSFET |