2N7002BKMB - NXP Semiconductors

2N7002BKMB single N-channel MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. SO T8 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  Logic-level compatible  Ultra thin package profile with 0.37 mm .

Features

 Very fast switching
 Trench MOSFET technology
 ESD protection up to 2 kV
 Logic-level compatible
 Ultra thin package profile with 0.37 mm height 1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 450 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 1 Max 60 20 450 1.6 Unit V V mA Ω Static characteristics [1] .