2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ESD rating: 2000V (HBM) Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching RoHS compliant device Applications High speed line driver SOT-23 Ordering Information Part Number Marking Code Package Packag.
ESD rating: 2000V (HBM)
Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V
High power and current handling capability
Very fast switching
RoHS compliant device
Applications
High speed line driver
SOT-23
Ordering Information
Part Number
Marking Code
Package
Packaging
2N7002B
7B2 □
SOT-23
Tape & Reel
Marking Information
7B2 □
7B2 = Specific Device Code □ = Year & Week Code Marking
Absolute Maximum Ratings (Tamb=25℃, Unless otherwise specified)
Characteristic
Symbol
Drain-Source voltage Gate-Source voltage Maximum drain current (Note 1) Pulsed drain current (Note 1) Power dis.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N7002 |
Fairchild Semiconductor |
N-channel FET | |
2 | 2N7002 |
GME |
N-Channel Power Mosfet | |
3 | 2N7002 |
nexperia |
300mA N-channel MOSFET | |
4 | 2N7002 |
MCC |
N-Channel MOSFET | |
5 | 2N7002 |
Microchip |
N-channel MOSFET | |
6 | 2N7002 |
Rectron |
N-Channel Enhancement Mode Power MOSFET | |
7 | 2N7002 |
ST Microelectronics |
N-Channel MOSFET | |
8 | 2N7002 |
Central Semiconductor |
SILICON N-CHANNEL MOSFET | |
9 | 2N7002 |
Philips |
N-channel vertical D-MOS transistor | |
10 | 2N7002 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET | |
11 | 2N7002 |
ON Semiconductor |
N-channel FET | |
12 | 2N7002 |
NTE |
N-channel FET |