2N6765 - Inchange Semiconductor

2N6765 N-Channel MOSFET Transistor

·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS.

Features

2N6765
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 16A IGSS Gate Source Leakage Current VGS= 20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 150V; VGS= 0 VSD Diode Forward Voltage IF= 25A; VGS= 0 MIN MAX UNIT 150 V 24V 0.12 Ω 100 nA 1 mA 1.7 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .