·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive reqirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS.
2N6764
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 24A
IGSS Gate Source Leakage Current
VGS= 20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS= 0
VSD Diode Forward Voltage
IF= 38A; VGS= 0
MIN MAX UNIT 100 V
24V 0.055 Ω 100 nA 1 mA 1.9 V
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6760 |
Fairchild Semiconductor |
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2 | 2N6760 |
Inchange Semiconductor |
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3 | 2N6761 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
4 | 2N6761 |
Inchange Semiconductor |
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5 | 2N6762 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
6 | 2N6762 |
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7 | 2N6763 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
8 | 2N6763 |
Inchange Semiconductor |
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9 | 2N6765 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
10 | 2N6765 |
Inchange Semiconductor |
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11 | 2N6766 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
12 | 2N6766 |
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