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2N6760 - Inchange Semiconductor
·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6761 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 2 | 2N6761 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2N6762 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 4 | 2N6762 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2N6763 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | 2N6763 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 2N6764 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 8 | 2N6764 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 9 | 2N6765 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 10 | 2N6765 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | 2N6766 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 12 | 2N6766 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|