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·Collector-Emitter Sustaining Voltage- : VCEO = 80V(Min.) ·With TO-66 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C.
r-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=10A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC=10A; IB= 1A VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 3V IEBO Emitter Cutoff Current VEB= 7V; IC= 0 ICEO Collector Cutoff Current VCE= 40V; IB=0 ICBO Collector Base Cutoff Current VCB=150V; IE= 0 hFE DC Current Gain IC= 10A; VCE= 3V fT Current Gain-Bandwidth Product IC= 1A; VCE= 10V 2N6495 MIN TYP MAX UNIT 80 V 1.5 V 2.0 V 2.8 V 0.1 mA 0.1 mA 0.1 mA 10 60 25 MHz NOTICE： ISC reserves the rights to mak.
2N6495 - SavantIC
·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switchin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6490 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 2 | 2N6490 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 3 | 2N6490 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 4 | 2N6490 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 5 | 2N6490 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 6 | 2N6491 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 7 | 2N6491 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 8 | 2N6491 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 9 | 2N6491 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 10 | 2N6492 |
INCHANGE |
NPN Transistor |
|
| 11 | 2N6492 |
SavantIC |
Silicon Power Transistor |
|
| 12 | 2N6493 |
INCHANGE |
NPN Transistor |
|