2N6426 Darlington Transistors Datasheet

2N6426 Darlington Transistors

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6426/D Darlington Transistors NPN Silicon 2N6426 * 2N6427 *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipatio.

Features

) (IC = 10 mAdc, VBE = 0) Collector
  – Base Breakdown Voltage (IC = 100 m Adc, IE = 0) Emitter
  – Base Breakdown Voltage (IE = 10 m Adc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 40 40 12 — — — — — — — — — — — — 1.0 50 50 Vdc Vdc Vdc m Adc nAdc nAdc v 300 m s; Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small
  –Signal Transistors, FETs and Diodes De.

The same part from a different manufacturer

2N6426 - ON Semiconductor

2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* MA.

2N6426 - Fairchild Semiconductor

2N6426 Discrete POWER & Signal Technologies 2N6426 C BE TO-92 NPN Darlington Transistor This device is designed fo.

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2N6426 - Motorola