2N6425 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar PNP Device. VCEO = 300V IC = 0.25A All Semelab hermet.
tion furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 1-Aug-02 .
·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and.
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6420 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS | |
2 | 2N6420 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
3 | 2N6421 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS | |
4 | 2N6421 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
5 | 2N6422 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS | |
6 | 2N6422 |
INCHANGE |
Silicon PNP Power Transistor | |
7 | 2N6423 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS | |
8 | 2N6423 |
INCHANGE |
Silicon PNP Power Transistor | |
9 | 2N6424 |
Central Semiconductor |
PNP Silicon Power Transistor | |
10 | 2N6424 |
Seme LAB |
Bipolar PNP Device | |
11 | 2N6426 |
ON Semiconductor |
Darlington Transistors | |
12 | 2N6426 |
Fairchild Semiconductor |
NPN Darlington Transistor |