Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2N6426 |
Click to view a larger image
| Part Number | 2N6426 |
| Manufacturer | Fairchild Semiconductor |
| Description | 2N6426 Discrete POWER & Signal Technologies 2N6426 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourc... |
| Features |
ation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N6426 625 5.0 83.3 200
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
2N6426
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current I ... |
| Document |
 2N6426 Data Sheet
PDF 25.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6420 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 2 | 2N6420 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2N6421 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 4 | 2N6421 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 5 | 2N6422 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|