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2N6425 |
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| Part Number | 2N6425 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications AB... |
| Features |
n Voltage IC= -0.25A; IB=-0.025A
VBE(on)
Base-Emitter On Voltage
IC= -0.1A; VCE=-10V
hFE
DC Current Gain
IC=-0.1A; VCE=-20V
MIN TYP. MAX UNIT
-300
V
-100 uA
-0.25 mA
-2.5
V
-1.0
V
35
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in eq... |
| Document |
 2N6425 Data Sheet
PDF 216.08KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6420 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 2 | 2N6420 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2N6421 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 4 | 2N6421 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 5 | 2N6422 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|