·With TO-3 package ·High current and high power capability ·Low collector saturation voltage APPLICATIONS ·For use in high current ,high power applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Coll.
itter breakdwon voltage Collector-base breakdwon voltage Emitter-base breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ;IB=0 IC=2m A ;IE=0 IE=2m A ;IC=0 IC=20A ;IB=2A IC=30A; IB=6A IC=30A ; VCE=5V VCE=100V; IB=0 VCE=300V; VBE=0 VEB=5V; IC=0 IC=5A ; VCE=5V IC=20A ; VCE=5V IC=30A ; VCE=5V IC=1A ; VCE=10V 40 12 6 10 MIN 200 300 5 TYP. 2N6322 SYMBOL V(BR)CEO V(BR)CBO V.
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Current Capability ·Wide Area of Safe Operation ·.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6323 |
SSDI |
NPN Transistor | |
2 | 2N6324 |
Solid States Devices |
NPN Transistor | |
3 | 2N6325 |
SSDI |
NPN Transistor | |
4 | 2N6326 |
SavantIC |
(2N6326 -2N6328) Silicon Power Transistor | |
5 | 2N6327 |
SavantIC |
(2N6326 -2N6328) Silicon Power Transistor | |
6 | 2N6327 |
Microsemi |
NPN Transistor | |
7 | 2N6328 |
SavantIC |
(2N6326 -2N6328) Silicon Power Transistor | |
8 | 2N6328 |
Microsemi |
NPN Transistor | |
9 | 2N6329 |
API |
Silicon Transistor | |
10 | 2N6329 |
Advanced |
Silicon Transistor | |
11 | 2N6329 |
Magna |
(2N6329 - 2N6331) PNP SIlicon Power Transistor | |
12 | 2N6329 |
Microsemi |
PNP Transistor |