2N6322 INCHANGE NPN Transistor Datasheet, en stock, prix

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2N6322

INCHANGE
2N6322
2N6322 2N6322
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Part Number 2N6322
Manufacturer INCHANGE
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operati...
Features SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 6A VBE(on) Base-Emitter On Voltage IC= 30A ; VCE= 5V ICBO Collector Cutoff Current VCB= 300V ; IE= 0 ICEO Collector Cutoff Current VCE= 200V ; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 5A ; VCE= 5V hFE-2 DC Current Gain IC= 20A ; VCE= 5V hFE-3 DC Current Gain IC= 30A ; VCE= 5V fT Current-Gain—Bandwidth Product IC=1A ; VCE...

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