·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6326 2N6327 2N6328 F Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6326 VCBO Collector-base voltage 2.
CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6326 VCEO(SUS) Collector-emitter sustaining voltage 2N6327 2N6328 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6326 ICBO Collector cut-off current 2N6327 2N6328 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency IC=15A; IB=1.5A IC=15A; IB=1.5A IC=8A ; VCE=4V VCB=60V; IE=0 TC=150 VCB=80V; IE=0 TC=150 VCB=100V; IE=0 TC=150 VEB=4V; IC=0 IC=8A ; VCE=4V IC=30A ; VCE=4V IC=0.2 A ;IB=0 2N6326 2N6327 2N6328 SYMBOL CONDITIONS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6322 |
Solid States Devices |
NPN Transistor | |
2 | 2N6322 |
SavantIC |
Silicon Power Transistor | |
3 | 2N6322 |
INCHANGE |
NPN Transistor | |
4 | 2N6323 |
SSDI |
NPN Transistor | |
5 | 2N6324 |
Solid States Devices |
NPN Transistor | |
6 | 2N6325 |
SSDI |
NPN Transistor | |
7 | 2N6327 |
SavantIC |
(2N6326 -2N6328) Silicon Power Transistor | |
8 | 2N6327 |
Microsemi |
NPN Transistor | |
9 | 2N6328 |
SavantIC |
(2N6326 -2N6328) Silicon Power Transistor | |
10 | 2N6328 |
Microsemi |
NPN Transistor | |
11 | 2N6329 |
API |
Silicon Transistor | |
12 | 2N6329 |
Advanced |
Silicon Transistor |