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·High Switching Speed ·High DC Current Gain- : hFE= 30-120@ IC= 20A ·Low Collector Saturation Voltage- : VCE(sat)=1.0V(Min.)@ IC= 20A ·Complement to Type 2N6379 APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC Collec.
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2N6277 - TT
SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturat.
2N6277 - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military.
2N6277 - ON Semiconductor
High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit a.
2N6277 - Microsemi
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.co.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6270 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N6270 |
SavantIC |
(2N6270 / 2N6271) Silicon Power Transistors |
|
| 3 | 2N6271 |
SavantIC |
(2N6270 / 2N6271) Silicon Power Transistors |
|
| 4 | 2N6271 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N6274 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 6 | 2N6274 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 7 | 2N6274 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N6274 |
Microsemi |
NPN POWER SILICON TRANSISTOR |
|
| 9 | 2N6274 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | 2N6274 |
Motorola |
High Power NPN SIlicon Transistor |
|
| 11 | 2N6275 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 12 | 2N6275 |
INCHANGE |
Silicon NPN Power Transistor |
|