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·With TO-3 package ·High current capability ·Wide safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6270 Collector-base voltage 2N6271 2N6270 VCEO VEBO IC PD T.
specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL 2N6270 VCEO(SUS) Collector-emitter sustaining voltage 2N6271 IC=0.1A ;IB=0 80 V 100 VCEsat Collector-emitter saturation voltage IC=7.5A ;IB=0.75A 1.0 V VBEsat Base-emitter saturation voltage IC=7.5A ;IB=0.75A 1.3 V ICEO Collector cut-off current VCE=1/2RatedVCE; IB=0 5.0 mA ICEV Collector cut-off current VCE=RatedVCE; VBE(off)=1.5V 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=15A ; VCE=4V 20 100 fT Trainsistion frequency IC=1A ; VCE=10V 75 MHz 2 SavantIC Semiconduct.
2N6270 - Seme LAB
2N6270 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6271 |
SavantIC |
(2N6270 / 2N6271) Silicon Power Transistors |
|
| 2 | 2N6271 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | 2N6274 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 4 | 2N6274 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 5 | 2N6274 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | 2N6274 |
Microsemi |
NPN POWER SILICON TRANSISTOR |
|
| 7 | 2N6274 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 2N6274 |
Motorola |
High Power NPN SIlicon Transistor |
|
| 9 | 2N6275 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 10 | 2N6275 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 11 | 2N6275 |
Motorola |
High Power NPN SIlicon Transistor |
|
| 12 | 2N6276 |
Seme LAB |
Bipolar NPN Device |
|