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MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275 VCEO(sus) = 150 Vdc (Min) — 2N6277 • High DC Current Gain — hFE = 30–120 @ I.
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2N6275 - ON Semiconductor
High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit a.
2N6275 - INCHANGE
·Collector-Emitter Breakdown Voltage- : VCEO=120V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6270 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N6270 |
SavantIC |
(2N6270 / 2N6271) Silicon Power Transistors |
|
| 3 | 2N6271 |
SavantIC |
(2N6270 / 2N6271) Silicon Power Transistors |
|
| 4 | 2N6271 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N6274 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 6 | 2N6274 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 7 | 2N6274 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N6274 |
Microsemi |
NPN POWER SILICON TRANSISTOR |
|
| 9 | 2N6274 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | 2N6274 |
Motorola |
High Power NPN SIlicon Transistor |
|
| 11 | 2N6276 |
Seme LAB |
Bipolar NPN Device |
|
| 12 | 2N6276 |
INCHANGE |
Silicon NPN Power Transistor |
|