2N6275 INCHANGE Silicon NPN Power Transistor Datasheet, en stock, prix

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2N6275

INCHANGE
2N6275
2N6275 2N6275
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Part Number 2N6275
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : VCEO=120V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABS...
Features age IC=20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC=50A; IB= 10A hFE-1 DC Current Gain IC=1A; VCE= 4V hFE-2 DC Current Gain IC=20A; VCE=4V hFE-3 DC Current Gain IC=50A; VCE= 4V MIN TYP. MAX UNIT 120 V 100 uA 50 uA 1 V 3 V 1.8 V 3.5 V 50 30 120 10 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for...

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