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2N6101 - INCHANGE

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2N6101 NPN Transistor

·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in medium power liner amplifier and switching service in consumer ,automotive and industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

Features

Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current ICEO Collector Cutoff Current IC= 5A ; VCE= 4V VCE= 75V; VBE= -1.5V VCE= 75V; VBE= -1.5V;TC=150℃ VCE= 60V;IB= 0 IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE-1 DC Current Gain IC= 5A ; VCE= 4V hFE-2 DC Current Gain IC= 10A ; VCE= 4V fT Current-Gain—Bandwidth Product IC=.

The same part from a different manufacturer

Datasheet 2N6101 - RCA 2N6101

File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA .

Datasheet 2N6101 - SavantIC 2N6101

·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applicati.

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