2N6101 |
Part Number | 2N6101 |
Manufacturer | INCHANGE |
Description | ·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... |
Features |
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 5A ; VCE= 4V
VCE= 75V; VBE= -1.5V VCE= 75V; VBE= -1.5V;TC=150℃
VCE= 60V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE-1
DC Current Gain
IC= 5A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC=... |
Document |
2N6101 Data Sheet
PDF 191.12KB |
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