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·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UN.
ified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V ICEO Collector Cutoff Current VCE= 60V;IB= 0 IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE DC Current Gain IC= 5A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V,ftest= 0.1MHz 2N6100 MIN MAX UNIT 70 V 1.3 V 3.5 V 1.3 V 0.5 mA 1.0 mA 20 80 0.8 MHz NOTICE： ISC reserves .
2N6100 - RCA
File No. 485 DUCrBLJD Solid State Division Power Transistors 2N6098 2N6099 2N6100 2N6101 2N6102 2N6103 JEDEC TD-220AA .
2N6100 - SavantIC
·With TO-220 package ·High current capability APPLICATIONS ·For use in general-purpose amplifier and switching applicati.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6101 |
RCA |
Power Transistors |
|
| 2 | 2N6101 |
SavantIC |
Silicon Power Transistor |
|
| 3 | 2N6101 |
INCHANGE |
NPN Transistor |
|
| 4 | 2N6102 |
RCA |
Power Transistors |
|
| 5 | 2N6102 |
SavantIC |
Silicon Power Transistor |
|
| 6 | 2N6102 |
INCHANGE |
NPN Transistor |
|
| 7 | 2N6103 |
RCA |
Power Transistors |
|
| 8 | 2N6103 |
SavantIC |
Silicon Power Transistor |
|
| 9 | 2N6103 |
INCHANGE |
NPN Transistor |
|
| 10 | 2N6104 |
ETC |
RF POWER TRANSISTORS |
|
| 11 | 2N6105 |
ETC |
RF POWER TRANSISTORS |
|
| 12 | 2N6106 |
RCA |
Power Transistors |
|