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·With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6029 2N6030 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6029 Collector-base voltage 2N6030 2N6029 VCE.
stors 2N6029 2N6030 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6029 IC=-0.2A ;IB=0 2N6030 IC=-10A; IB=-1A IC=-16A ;IB=-4A IC=-10A; IB=-1A IC=-8A ; VCE=-2V VCB=ratedVCBO; IE=0 2N6029 ICEO Collector cut-off current 2N6030 VCE=-60V; IB=0 VCE=ratedVCB VCE=ratedVCB; TC=150 VEB=-7V; IC=0 2N6029 hFE-1 DC current gain 2N6030 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=-16A ; VCE=-2V IE=0 ; VCB=-10V ;f=0.1MHz IC=-1A ; VCE=-20V;f=0.5MHz 1.0 IC=-8A ; VCE=-2V 20 4 1000 pF MHz 80 25 -1.0 mA -5.0 -1.0 100 mA VCE=-50V; IB=0 -1.0 mA -120 -1.0 -2.0 -1.8 -1.5 -1.0.
2N6029 - Central Semiconductor Corp
The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by th.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6027 |
ON Semiconductor |
Programmable Unijunction Transistor |
|
| 2 | 2N6027 |
UTC |
PROGRAMMABLE UNIJUNCTION TRANSISTOR |
|
| 3 | 2N6027 |
Central Semiconductor |
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |
|
| 4 | 2N6028 |
ON Semiconductor |
Programmable Unijunction Transistor |
|
| 5 | 2N6028 |
NTE |
Programmable Unijunction Transistor |
|
| 6 | 2N6028 |
Central Semiconductor |
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |
|
| 7 | 2N60 |
ROUM |
2A 600V N-channel Enhancement Mode Power MOSFET |
|
| 8 | 2N60 |
HAOHAI |
N-Channel MOSFET |
|
| 9 | 2N60 |
INCHANGE |
TO-251 N-Channel MOSFET |
|
| 10 | 2N60 |
UTC |
N-CHANNEL MOSFET |
|
| 11 | 2N60 |
nELL |
N-Channel Power MOSFET |
|
| 12 | 2N60 |
yecheng technology |
N-Channel Power MOSFET |
|
