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R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Improved dv/dt capability,high ruggedness MECHANICAL DATA PRODUCT SUMMARY V DS (V) RDS(on) (Ω) 600 4.4 @ VGS =10V TO-220AB 2N60 ITO-220AB 2N60F ID (A) 2 TO-263 2N60D ● Case:TO-220,I.
● RDS(ON)<4.4Ω @ VGS=10V,ID=1A
● Fast switching capability
● Lead free in compliance with EU RoHS directive.
● Improved dv/dt capability,high ruggedness
MECHANICAL DATA
PRODUCT SUMMARY
V DS (V)
RDS(on) (Ω)
600 4.4 @ VGS =10V
TO-220AB
2N60
ITO-220AB
2N60F
ID (A)
2
TO-263
2N60D
● Case:TO-220,ITO-220,TO-251,TO-252, TO-262,TO-263 Package
23 1
Ordering Information
Part No.
Package
Packing
1 23
TO-262
2N60E
1 23
TO-251
2N60N
TO-252
2N60M
2N60-TU
TO-220
50pcs / Tube
2N60F-TU
ITO-220
50pcs / Tube
2N60E-TU
TO-262
50pcs / Tube
2N60D-TU 2N60D-TR 2N60N-TU 2N60M-TU 2N60M-TR
TO-26.
2N60 - nELL
The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-.
2N60 - ROUM
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, .
2N60 - WEITRON
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfo.
2N60 - HAOHAI
2A, 600V, N H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI U: TO-251 D: TO-252 80/ 2.5K/ 2N60 Serie.
2N60 - yecheng technology
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degr.
2N60 - INCHANGE
isc N-Channel MOSFET Transistor 2N60 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) .
2N60 - UTC
The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,.
2N60 - ART CHIP
The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate .
2N60 - PINGWEI
2N60(F,B,H,G,D) 2A mps,600 Volts N-CHANNEL MOSFET FEATURE 2A,600V,RDS(ON)=4Ω@VGS=10V/1A Low gate charge Low Ciss.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N60-C |
UTC |
N-CHANNEL MOSFET |
|
| 2 | 2N60-CBS |
UTC |
N-CHANNEL POWER MOSFET |
|
| 3 | 2N60-E |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 4 | 2N60-F |
UTC |
N-CHANNEL MOSFET |
|
| 5 | 2N60-TC |
UTC |
N-CHANNEL MOSFET |
|
| 6 | 2N6008 |
Sprague |
Series 2N Transistors |
|
| 7 | 2N6009 |
Sprague |
Series 2N Transistors |
|
| 8 | 2N6027 |
ON Semiconductor |
Programmable Unijunction Transistor |
|
| 9 | 2N6027 |
UTC |
PROGRAMMABLE UNIJUNCTION TRANSISTOR |
|
| 10 | 2N6027 |
Central Semiconductor |
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |
|
| 11 | 2N6028 |
ON Semiconductor |
Programmable Unijunction Transistor |
|
| 12 | 2N6028 |
NTE |
Programmable Unijunction Transistor |
|