of TO−92 Tape Orientation 2N6027 2N6027G 2N6028 5000 Units / Box N/A − Bulk 2N6028G 2N6027RLRA 2N6027RLRAG 2N6028RLRA 2N6027RL1 2N6027RL1G 2000 / Tape & Reel Round side of TO−92 and adhesive tape visible 2N6028RLRAG 2N6028RLRM 2N6028RLRMG 2N6028RLRP 2N6028RLRPG 2000 / Tape & Ammo Box Flat side of TO−92 and adhesive tape visible Round side of TO.
• Programmable − RBB, h, IV and IP
• Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
• Low Gate to Anode Leakage Current − 10 nA Maximum
• High Peak Output Voltage − 11 V Typical
• Low Offset Voltage − 0.35 V Typical (RG = 10 kW)
• Pb−Free Packages are Available
*
http://onsemi.com
PUTs 40 VOLTS, 300 mW
G A
K
1 2 3
TO−92 (TO−226AA) CASE 029 STYLE 16
MARKING DIAGRAM
2N 602x AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components In.
The UTC 2N6027 is a programmable unijunction transistor, it uses UTC’s advanced technology to provide customers with low.
The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N6028 |
ON Semiconductor |
Programmable Unijunction Transistor | |
2 | 2N6028 |
NTE |
Programmable Unijunction Transistor | |
3 | 2N6028 |
Central Semiconductor |
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS | |
4 | 2N6029 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
5 | 2N6029 |
Thomson |
COMPLEMENTARY HIGH POWER TRANSISTORS | |
6 | 2N6029 |
SavantIC |
(2N6029 / 2N6030) Silicon PNP Power Transistor | |
7 | 2N60 |
ROUM |
2A 600V N-channel Enhancement Mode Power MOSFET | |
8 | 2N60 |
HAOHAI |
N-Channel MOSFET | |
9 | 2N60 |
INCHANGE |
TO-251 N-Channel MOSFET | |
10 | 2N60 |
UTC |
N-CHANNEL MOSFET | |
11 | 2N60 |
nELL |
N-Channel Power MOSFET | |
12 | 2N60 |
yecheng technology |
N-Channel Power MOSFET |