Part Number
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2N60 |
Manufacturer
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PINGWEI |
Description
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2N60(F,B,H,G,D)
2A mps,600 Volts N-CHANNEL MOSFET
FEATURE
2A,600V,RDS(ON)=4Ω@VGS=10V/1A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB ...
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Features
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20
4 32
TO-220
2 62
TO-262 TO-263
2 62
TO-251 TO-252
6 21
Units
℃/W W
- -
Rev. 14-1 http:// www.perfectway.cn
Electrical Characteristics (TC=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃,
/ΔTJ
ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0V
Gate-Body Leakage Current, Forward
IGSSF
VGS=30V, VDS=0V
Gate-Body Leakage Current, Reverse
IGSSR
VGS=-30V, VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VG...
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Document
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2N60 Data Sheet
PDF 194.63KB |