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·DC Current Gain- : hFE= 20-100@IC= 20A ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS ·Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Vol.
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2N5933 - Seme LAB
2N5933 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5930 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N5930 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 3 | 2N5931 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 4 | 2N5932 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N5932 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 6 | 2N5934 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | 2N5934 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 8 | 2N5935 |
Seme LAB |
Bipolar NPN Device |
|
| 9 | 2N5935 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2N5936 |
Seme LAB |
Bipolar NPN Device |
|
| 11 | 2N5936 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 12 | 2N5937 |
Seme LAB |
Bipolar NPN Device |
|