Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2N5932 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.
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2N5932 - Inchange Semiconductor
·DC Current Gain- : hFE= 20-100@IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5930 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N5930 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 3 | 2N5931 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 4 | 2N5933 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N5933 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 6 | 2N5934 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | 2N5934 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 8 | 2N5935 |
Seme LAB |
Bipolar NPN Device |
|
| 9 | 2N5935 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2N5936 |
Seme LAB |
Bipolar NPN Device |
|
| 11 | 2N5936 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 12 | 2N5937 |
Seme LAB |
Bipolar NPN Device |
|