Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
·DC Current Gain- : hFE= 20-100@IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS ·Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 170 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Vol.
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5930 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N5930 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 3 | 2N5932 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | 2N5932 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 5 | 2N5933 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | 2N5933 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 7 | 2N5934 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N5934 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 9 | 2N5935 |
Seme LAB |
Bipolar NPN Device |
|
| 10 | 2N5935 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 11 | 2N5936 |
Seme LAB |
Bipolar NPN Device |
|
| 12 | 2N5936 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|