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The CENTRAL SEMICONDUCTOR 2N5758, 2N6226 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for medium power amplifier and switching applications where high voltages are required. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitt.
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2N5759 - Seme LAB
2N5759 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0..
2N5759 - SavantIC
·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in high power .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5754 |
RCA |
Thyristors |
|
| 2 | 2N5755 |
RCA |
Thyristors |
|
| 3 | 2N5756 |
RCA |
Thyristors |
|
| 4 | 2N5757 |
RCA |
Thyristors |
|
| 5 | 2N5758 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | 2N5758 |
Motorola |
Silicon Transistor |
|
| 7 | 2N5758 |
SavantIC |
(2N5758 - 2N5760) Silicon NPN Power Transistors |
|
| 8 | 2N5758 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 9 | 2N5716 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |
|
| 10 | 2N5717 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |
|
| 11 | 2N5718 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |
|
| 12 | 2N5724 |
Microsemi |
SCR |
|