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The CENTRAL SEMICONDUCTOR 2N5758, 2N6226 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for medium power amplifier and switching applications where high voltages are required. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitt.
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2N5758 - Motorola
MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 (See 2N4398) High-Voltage High-Power Silicon Transistors . . . designed .
2N5758 - SavantIC
·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in high power .
2N5758 - Seme LAB
2N5758 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5754 |
RCA |
Thyristors |
|
| 2 | 2N5755 |
RCA |
Thyristors |
|
| 3 | 2N5756 |
RCA |
Thyristors |
|
| 4 | 2N5757 |
RCA |
Thyristors |
|
| 5 | 2N5759 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 6 | 2N5759 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | 2N5759 |
SavantIC |
(2N5758 - 2N5760) Silicon NPN Power Transistors |
|
| 8 | 2N5716 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |
|
| 9 | 2N5717 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |
|
| 10 | 2N5718 |
ETC |
SILICON LOW NOISE N-CHANNEL JUNCTION FET |
|
| 11 | 2N5724 |
Microsemi |
SCR |
|
| 12 | 2N5725 |
Microsemi |
SCR |
|