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SYMBOL 2N5415 2N5416 Collector Emitter Voltage VCEO 200 300 Collector Base Voltage VCBO 200 350 Emitter Base Voltage VEBO 4 6 Collector Current Continuous IC (--------------------1------------------) Base Current Continuous IB (-----------------0.5------------------) Power Dissipation @ Ta=50ºC PD (--------------------1---------------.
RMAL RESISTANCE Junction to Ambient Junction to Case
Rth(j-a) Rth(j-c)
150 ºC/W 17.5 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Breakdown Voltage BVCEO(sus)
*
IC=50mA,IB=0
Collector Cut off Current
ICBO VCB=175V, IE=0
VCB=280V, IE=0
Collector Cutoff Current
ICEO
VCE=150V, IB=0
VCE=250V, IB=0
Emitter Cut off Current
IEBO
VEB=4V, IC=0
VEB=6V, IC=0
2N5415 >200 <50
<50
<20
2N5416 >300
<50
<50
<20
UNITS V µA µA µA µA µA µA
Collector Emitter Saturation Voltage
VCE(Sat)
IC=50mA,IB=5mA
<2.5
<2
V
B.
2N5415 - Microsemi
This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliabi.
2N5415 - TT
SILICON PNP TRANSISTORS 2N5415 / 2N5416 Hermetic TO-39 Metal Package. High Voltage Ideally Suited As Drivers In High Vol.
2N5415 - Inchange Semiconductor
·PNP high-voltage transistor ·Low current (max. 200 mA) ·High voltage (max. 300 V) isc Product Specification 2N5415 AP.
2N5415 - STMicroelectronics
The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use .
2N5415 - Central Semiconductor
The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and industrial line-opera.
2N5415 - NXP
DESCRIPTION PNP high-voltage transistor in a TO-39 metal package. 3 2 2 3 MAM334 1 Fig.1 Simplified outline (TO-39.
2N5415 - Motorola
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Cur.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5410 |
SSDI |
PNP Transistor |
|
| 2 | 2N5411 |
SSDI |
PNP Transistor |
|
| 3 | 2N5412 |
SSDI |
NPN Transistor |
|
| 4 | 2N5414 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N5415CSM4 |
Seme LAB |
PNP PLANAR EPITAXIAL TRANSISTOR |
|
| 6 | 2N5415S |
STMicroelectronics |
Silicon Planar Epitaxial PNP Transistor |
|
| 7 | 2N5416 |
NXP |
PNP high-voltage transistors |
|
| 8 | 2N5416 |
STMicroelectronics |
SILICON PNP TRANSISTORS |
|
| 9 | 2N5416 |
Motorola |
PNP Transistor |
|
| 10 | 2N5416 |
NTE |
Silicon PNP Transistors |
|
| 11 | 2N5416 |
Central Semiconductor |
SILICON PNP TRANSISTORS |
|
| 12 | 2N5416 |
Microsemi |
PNP Silicon Low-Power Transistor |
|