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2N5416 - Motorola

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2N5416 PNP Transistor

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ Ta = 50°C Derate above 50°C Operating and Storage Junction Temperature Range PIMP NPN.

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Datasheet 2N5416 - STMicroelectronics 2N5416

The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use .

Datasheet 2N5416 - NXP 2N5416

DESCRIPTION PNP high-voltage transistor in a TO-39 metal package. 3 2 2 3 MAM334 1 Fig.1 Simplified outline (TO-39.

Datasheet 2N5416 - Central Semiconductor 2N5416

The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and industrial line-opera.

Datasheet 2N5416 - TT 2N5416

SILICON PNP TRANSISTORS 2N5415 / 2N5416 Hermetic TO-39 Metal Package. High Voltage Ideally Suited As Drivers In High Vol.

Datasheet 2N5416 - NTE 2N5416

2N5416 Silicon PNP Transistor Power Amplifier & High Speed Switch (Compl to NTE396) Absolute Maximum Ratings: Collector.

Datasheet 2N5416 - Microsemi 2N5416

This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliabi.

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