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The -25V InterFET 2N5397 and 2N5398 are targeted for low noise amplifier stages as well as mixer and oscillator designs. Gate leakages are typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications. Gate Drain 2 Source TO-72 Bottom View 3 4 Case 1 Source 1 Drain 2 SOT23 Top View 3 Gate .
• InterFET N0026L Geometry
• Low Noise: 3 nV/√Hz Typical
• Low Ciss: 5.0pF Typical
• Low Leakage: 10pA Typical
• RoHS Compliant
• SMT, TH, and Bare Die Package options.
Applications
• Low Noise
• High Power Gain
• High Transconductance
• Mixers
• Oscillators
• VHF Amplifiers
Description
The -25V InterFET 2N5397 and 2N5398 are targeted for low noise amplifier stages as well as mixer and oscillator designs. Gate leakages are typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications.
Gate Drain 2 Source
TO-72 Bottom View
3 4 C.
2N5398 - National Semiconductor
The 2N5397 thru 2N5398 series of N channel JFETs is designed for VHF/UHF common-source or common- gate amplifiers, mixe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5397 |
National Semiconductor |
N-Channel JFETs |
|
| 2 | 2N5397 |
InterFET |
N-Channel JFET |
|
| 3 | 2N5301 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 4 | 2N5301 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N5301 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 6 | 2N5301 |
SSDI |
NPN SILICON POWER TRANSISTOR |
|
| 7 | 2N5301 |
Multicomp |
Bipolar Transistor |
|
| 8 | 2N5301 |
NTE |
Silicon NPN Transistor |
|
| 9 | 2N5301 |
Micross |
N-CHANNEL JFET |
|
| 10 | 2N5301 |
Toshiba |
SILICON NPN Transistor |
|
| 11 | 2N5302 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 12 | 2N5302 |
SSDI |
NPN SILICON POWER TRANSISTOR |
|