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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5301/D High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (.
ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Symbol VCEO VCB IC IB 2N5301 40 40 30 2N5302 60 60 30 2N5303 80 80 20 Unit Vdc Vdc Adc Adc Collector
–Emitter Voltage Collector
–Base Voltage Collector Current — Continuous Base Cur.
2N5301 - Seme LAB
2N5301 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0..
2N5301 - Multicomp
High Power TO-3, NPN, Silicon Transistor Designed for use in power amplifier and switching circuits applications Maxim.
2N5301 - Micross
2N5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The 2N5301 is a very High Input Impedance .
2N5301 - Inchange Semiconductor
With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area AP.
2N5301 - Toshiba
: SILICON NPN TRIPLE DIFFUSED TYPE 3 2N5301 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR A.
2N5301 - NTE
The 2N5301 and 2N5303 are silicon NPN transistors in a TO−3 type case designed for use in power amplifier and switching.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5302 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 2 | 2N5302 |
SSDI |
NPN SILICON POWER TRANSISTOR |
|
| 3 | 2N5302 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | 2N5302 |
Microsemi |
NPN HIGH POWER SILICON TRANSISTOR |
|
| 5 | 2N5302 |
INCHANGE |
NPN Transistor |
|
| 6 | 2N5302 |
Toshiba |
SILICON NPN Transistor |
|
| 7 | 2N5303 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 8 | 2N5303 |
Multicomp |
Bipolar Transistor |
|
| 9 | 2N5303 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2N5303 |
Microsemi |
NPN HIGH POWER SILICON TRANSISTOR |
|
| 11 | 2N5303 |
NTE |
Silicon NPN Transistor |
|
| 12 | 2N5303 |
Seme LAB |
Bipolar NPN Device |
|
