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TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices 2N5302 2N5303 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Junction Tempe.
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2N5302 - ON Semiconductor
2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching.
2N5302 - INCHANGE
·Low Collector Saturation Voltage- : VCE(sat)= 0.75V(Max.)@ IC= 10A ·Wide Area of Safe Operation ·Complement to Type 2N4.
2N5302 - Seme LAB
2N5302 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0..
2N5302 - Toshiba
: 2N5302 3 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR A.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N5301 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 2 | 2N5301 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | 2N5301 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 4 | 2N5301 |
SSDI |
NPN SILICON POWER TRANSISTOR |
|
| 5 | 2N5301 |
Multicomp |
Bipolar Transistor |
|
| 6 | 2N5301 |
NTE |
Silicon NPN Transistor |
|
| 7 | 2N5301 |
Micross |
N-CHANNEL JFET |
|
| 8 | 2N5301 |
Toshiba |
SILICON NPN Transistor |
|
| 9 | 2N5303 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 10 | 2N5303 |
Multicomp |
Bipolar Transistor |
|
| 11 | 2N5303 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 12 | 2N5303 |
Microsemi |
NPN HIGH POWER SILICON TRANSISTOR |
|
