The 2N5109 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE PDISS 20 V 1.0 W @ TA = 25 OC 2.5 W @ TC = 75 OC 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS TA = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 5.0 mA BVCER IC = 5.0 mA RBE = 10Ω BVCBO IC = 100 µA ICEX VCE = 35 V VCE = 15 V V.
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·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of.
The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed packa.
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and out.
2N5109 JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RAT.
www.DataSheet4U.com The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N5102 |
RCA Solid State |
RF Power Devices | |
2 | 2N5108 |
Advanced Semiconductor |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
3 | 2N5108 |
Motorola |
HIGH FREQUENCY TRANSISTOR | |
4 | 2N5108 |
INCHANGE |
Silicon NPN Power Transistor | |
5 | 2N5114 |
Calogic LLC |
P-Channel JFET | |
6 | 2N5114 |
Solitron Devices |
P-CHANNEL JFETS | |
7 | 2N5114 |
Micross |
P-CHANNEL JFET | |
8 | 2N5114 |
Microsemi |
P-Channel J-FET | |
9 | 2N5114 |
VPT |
P-Channel J-FET | |
10 | 2N5114 |
Central Semiconductor |
SILICON P-CHANNEL JFETS | |
11 | 2N5115 |
Calogic LLC |
P-Channel JFET | |
12 | 2N5115 |
Solitron Devices |
P-CHANNEL JFETS |