2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR Datasheet

2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR

The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. PACKAGE STYLE TO-39 FEATURES: • GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 400 mA 55 V 30 V 3.5 W @ TC = 25 C -65 to +200 C -65 to +200 C 50 C/W O O O O 1 = Emitter 2 = Base .

Features

• GPE = 6.0 dB Typ. at 1.0 GHz
• FT = 1,500 MHz Typ. at 15 V/ 50 mA
• Hermetic TO-39 Package MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 400 mA 55 V 30 V 3.5 W @ TC = 25 C -65 to +200 C -65 to +200 C 50 C/W O O O O 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS SYMBOL BVCER BVEBO ICES ICEO ft COB GPE ηC IE = 100 µA VCE = 50 V VCE = 15 V VCE = 15 V VCE = 15 V VCB = 30 V VCC = 28 V IC = 5.0 mA TA = 25 C O NONE TEST CONDITIONS RBE = 10Ω MINIMUM 55 3.0 TYPICAL MAXIMUM UNITS V V 1.0 TC = +150 C O µA mA µA MHz 10.0 20 IC = 50 mA f = 200 MHz f = 1.0 MHz 1200 3.0 5.0 35 pF dB %.

The same part from a different manufacturer

2N5108 - Motorola

2N5108 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (Rbe = 10(7) Collector-Base Voltage E.

2N5108 - INCHANGE

·High Current-Gain Bandwidth Product : fT= 1200MHz (Min) @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of.

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2N5108 - Advanced Semiconductor