2N5108 |
Part Number | 2N5108 |
Manufacturer | Advanced Semiconductor |
Description | The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. PACKAGE STYLE TO-39 FEATURES: • GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic ... |
Features |
• GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 400 mA 55 V 30 V 3.5 W @ TC = 25 C -65 to +200 C -65 to +200 C 50 C/W O O O O 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS SYMBOL BVCER BVEBO ICES ICEO ft COB GPE ηC IE = 100 µA VCE = 50 V VCE = 15 V VCE = 15 V VCE = 15 V VCB = 30 V VCC = 28 V IC = 5.0 mA TA = 25 C O NONE TEST CONDITIONS RBE = 10Ω MINIMUM 55 3.0 TYPICAL MAXIMUM UNITS V V 1.0 TC = +150 C O µA mA µA MHz 10.0 20 IC = 50 mA f = 200 MHz f = 1.0 MHz 1200 3.0 5.0 35 pF dB %... |
Document |
2N5108 Data Sheet
PDF 28.64KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N5102 |
RCA Solid State |
RF Power Devices | |
2 | 2N5108 |
Motorola |
HIGH FREQUENCY TRANSISTOR | |
3 | 2N5108 |
INCHANGE |
Silicon NPN Power Transistor | |
4 | 2N5109 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
5 | 2N5109 |
Motorola |
HIGH FREQUENCY TRANSISTOR |