2N3741A MEDIUM-POWER PNP TRANSISTORS Datasheet

2N3741A MEDIUM-POWER PNP TRANSISTORS

2N3740, A(SILICON) 2N3741, A MEDIUM-POWER PNP TRANSISTORS · .. ideal for use as drivers, switches and direct replacement of germanium medium·power devices. These devices feature: • Low Saturation Voltage - = = VCE(sat) 0.6 Vdc@ IC 1.0 Amp • High Gain Characteristics - hFE = 30-100@ IC = 250 mAdc • Direct Substitution for Germanium Equivalents • Excellent Sa.

Features

URVE 5 ~ I'-... ~ ~ ~ 0 oo 25 50 ~ .... ~ . Ion 125 150 175 200 TC ,TEMPERATURE 1°C) Safe Area Curves are indicated by Figura 2. Both limits are applicable and must be observed. -Indicates JEOEC -Registered Data. POWER TRANSISTORS PNPSILICON 60-80 VOLTS 25 WATTS ~:;~ OIA 0.250 0.340 /~ ""! 0.050 0.075 ~~l: OIA 0.360 MIN CASE 80 (TO
·66) COLLECTOR CONNECTED TO CASE 2-582 2N3740,A, 2N3741,A (continued)
*ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage

The same part from a different manufacturer

2N3741A - Microsemi Corporation

These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage dev.

2N3741A - Central Semiconductor Corp

The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base pr.

2N3741A - INCHANGE

·Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and .

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2N3741A - Motorola