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2N3741A |
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| Part Number | 2N3741A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, satura... |
| Features |
• • • • • Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Low Collector Cutoff Current: 100 nA (Max) 2N3741A Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regu... |
| Document |
 2N3741A Data Sheet
PDF 62.52KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3741 |
VPT |
PNP Power Silicon Transistor |
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| 2 | 2N3741 |
Microsemi Corporation |
Medium Power PNP Transistors |
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| 3 | 2N3741 |
Central Semiconductor Corp |
PNP SILICON POWER TRANSISTORS |
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| 4 | 2N3741 |
Motorola |
MEDIUM-POWER PNP TRANSISTORS |
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| 5 | 2N3741 |
Seme LAB |
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