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2N3741R - Inchange Semiconductor

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2N3741R Silicon PNP Power Transistors

·DC Current Gain- : hFE= 30-100@IC= -250mA ·Wide Area of Safe Operation ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A ·High Gain ·Low Saturation Voltage APPLICATIONS ·Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .

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Datasheet 2N3741R - Seme LAB 2N3741R

www.DataSheet4U.com 2N3741R MECHANICAL DATA Dimensions in mm POWER TRANSISTORS PNP SILICON 6.35 (0.250) 8.64 (0.340) .

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