·DC Current Gain- : hFE= 30-100@IC= -250mA ·Wide Area of Safe Operation ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A ·High Gain ·Low Saturation Voltage APPLICATIONS ·Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT .
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www.DataSheet4U.com 2N3741R MECHANICAL DATA Dimensions in mm POWER TRANSISTORS PNP SILICON 6.35 (0.250) 8.64 (0.340) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2N3741 |
VPT |
PNP Power Silicon Transistor | |
2 | 2N3741 |
Microsemi Corporation |
Medium Power PNP Transistors | |
3 | 2N3741 |
Central Semiconductor Corp |
PNP SILICON POWER TRANSISTORS | |
4 | 2N3741 |
Motorola |
MEDIUM-POWER PNP TRANSISTORS | |
5 | 2N3741 |
Seme LAB |
Bipolar PNP Device | |
6 | 2N3741 |
Aeroflex |
PNP Power Silicon Transistor | |
7 | 2N3741 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
8 | 2N3741A |
Microsemi Corporation |
Medium Power PNP Transistors | |
9 | 2N3741A |
Central Semiconductor Corp |
PNP SILICON POWER TRANSISTORS | |
10 | 2N3741A |
Motorola |
MEDIUM-POWER PNP TRANSISTORS | |
11 | 2N3741A |
INCHANGE |
Silicon PNP Power Transistor | |
12 | 2N3740 |
VPT |
PNP Power Silicon Transistor |