2N3667 - Inchange Semiconductor

2N3667 Silicon NPN Power Transistor

·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V.

Features

taining Voltage IC=10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 4V hFE DC Current Gain IC= 5A; VCE= 4V fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 4V; f= 1.0MHz 2N3667 MIN MAX UNIT 50 V 1.1 V 1.8 V 15 60 0.5 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment..