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2N3663 Discrete POWER & Signal Technologies 2N3663 E CB TO-92 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage.
tic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N3663 350 2.8 125 357
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
2N3663
NPN RF Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage
* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 1.0 mA, IB =.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N3665 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N3667 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2N3668 |
RCA |
Thyristors |
|
| 4 | 2N3668 |
General Semiconductor |
(2N3670 - 2N3668) 12.5A SILICON CONTROLLED RECTIFIERS |
|
| 5 | 2N3668 |
Central Semiconductor |
(2N3668 - 2N3670) SILICON CONTROLLED RECTIFIER |
|
| 6 | 2N3668 |
Digitron Semiconductors |
SILICON CONTROLLED RECTFIERS |
|
| 7 | 2N3669 |
RCA |
Thyristors |
|
| 8 | 2N3669 |
General Semiconductor |
(2N3670 - 2N3668) 12.5A SILICON CONTROLLED RECTIFIERS |
|
| 9 | 2N3669 |
Central Semiconductor |
(2N3668 - 2N3670) SILICON CONTROLLED RECTIFIER |
|
| 10 | 2N3669 |
Digitron Semiconductors |
SILICON CONTROLLED RECTFIERS |
|
| 11 | 2N3600 |
STMicroelectronics |
Silicon Planar NPN Transistor |
|
| 12 | 2N3600 |
RCA |
RF Power Transistors |
|