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2N3667 |
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| Part Number | 2N3667 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi... |
| Features |
taining Voltage IC=10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 4V
hFE
DC Current Gain
IC= 5A; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 4V; f= 1.0MHz
2N3667
MIN MAX UNIT
50
V
1.1
V
1.8
V
15
60
0.5
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment.... |
| Document |
 2N3667 Data Sheet
PDF 181.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3663 |
Fairchild Semiconductor |
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| 2 | 2N3665 |
Seme LAB |
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| 3 | 2N3668 |
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| 4 | 2N3668 |
General Semiconductor |
(2N3670 - 2N3668) 12.5A SILICON CONTROLLED RECTIFIERS |
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| 5 | 2N3668 |
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|