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2N3663 |
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| Part Number | 2N3663 |
| Manufacturer | Fairchild Semiconductor |
| Description | 2N3663 Discrete POWER & Signal Technologies 2N3663 E CB TO-92 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 m... |
| Features |
tic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
2N3663 350 2.8 125 357
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
2N3663
NPN RF Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 1.0 mA, IB =... |
| Document |
 2N3663 Data Sheet
PDF 23.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3665 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | 2N3667 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2N3668 |
RCA |
Thyristors |
|
| 4 | 2N3668 |
General Semiconductor |
(2N3670 - 2N3668) 12.5A SILICON CONTROLLED RECTIFIERS |
|
| 5 | 2N3668 |
Central Semiconductor |
(2N3668 - 2N3670) SILICON CONTROLLED RECTIFIER |
|