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2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 Discrete POWER & Signal Technologies 2N3390 2N3391 2N3391A 2N3392 2N3393 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratin.
mbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3390 / 3391/A / 3392 / 3393 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 3390-93, Rev B 2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitt.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N339 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 2 | 2N339 |
New Jersey Semi-Conductor |
N-P-N GROWN SILICON TRANSISTORS |
|
| 3 | 2N3390 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 4 | 2N3390 |
GE Solid State |
(2N3390 - 2N3394) SILICON TRANSISTORS |
|
| 5 | 2N3391A |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 6 | 2N3391A |
Central Semiconductor |
SILICON NPN TRANSISTOR |
|
| 7 | 2N3391A |
GE Solid State |
(2N3390 - 2N3394) SILICON TRANSISTORS |
|
| 8 | 2N3392 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 9 | 2N3392 |
GE Solid State |
(2N3390 - 2N3394) SILICON TRANSISTORS |
|
| 10 | 2N3392 |
Central Semiconductor |
SILICON NPN TRANSISTOR |
|
| 11 | 2N3393 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 12 | 2N3393 |
Central Semiconductor |
SILICON NPN TRANSISTOR |
|
